FW912 Micron Semiconductor Products, FW912 Datasheet - Page 21

• Manufacturer Part Number: FW912
• Description: Flash Memory Technology
• Manufacturer: Micron Semiconductor Products

NOTE: 1. Full status register check can be done after each word or after a sequence of words.
4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 – Rev. 3, Pub. 8/02
FULL STATUS REGISTER CHECK FLOW
Automated Word Programming
Issue PROGRAM SETUP
Word Program Passed
Read Status Register
Read Status Register
Issue Word Address
Full Status Register
2. SR3 must be cleared before attempting additional PROGRAM/ERASE operations.
3. SR4 is cleared only by the CLEAR STATUS REGISTER command, but it does not prevent additional program operation
Check (optional)
Command and
and Word Data
Word Program
Word Address
attempts.
Completed
SR7 = 1?
SR1 = 0?
SR3 = 0?
SR4 = 0?
Start
Bits
Bits
YES
YES
YES
YES
Flowchart
1
Figure 4
NO
NO
NO
NO
PROGRAM Attempted
Word Program Failed
on a Locked Block
V
PP
PROGRAM
SUSPEND?
NO
Range Error
SUSPEND Loop
PROGRAM
YES
ASYNC/PAGE/BURST FLASH MEMORY
21
BUS
OPERATION COMMAND COMMENTS
WRITE
WRITE
READ
Standby
Repeat for subsequent words.
Write FFh after the last word programming operation
to reset the device to read array mode.
BUS
OPERATION COMMAND COMMENTS
Standby
Standby
Standby
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
PROGRAM Addr = Address of word to
SETUP
WRITE
DATA
Data = 40h or 10h
Data = Word to be
Addr = Address of word to
Status register data
Toggle OE# or CE# to
update status register
Check SR7
1 = Ready, 0 = Busy
Check SR1
1 = Detect locked block
Check SR3
1 = Detect V
Check SR4
1 = Word program error
4 MEG x 16
be programmed
programmed
be programmed
2
3
PP
©2002, Micron Technology, Inc.
ADVANCE
LOW