FW912 Micron Semiconductor Products, FW912 Datasheet - Page 48

• Manufacturer Part Number: FW912
• Description: Flash Memory Technology
• Manufacturer: Micron Semiconductor Products

4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 – Rev. 3, Pub. 8/02
OFFSET
02 – 0F
2A, 2B
19, 1A
2D, 2E
13, 14
15, 16
17, 18
2F, 30
31, 32
33, 34
35, 36
10,11
1B
1C
1D
2C
12
1E
1F
20
21
22
23
24
25
26
27
28
29
0
1
0051, 0052
0003, 0000
0039, 0000
0000, 0000
0000, 0000
0000, 0000
005F–0000
0007–0000
0000–0001
0020–0000
001E–0000
0000–0001
0007–0000
005F–0000
reserved
DATA
00B4
00C6
000C
0059
0017
0022
0003
0000
0009
0000
0000
0003
0000
0017
0001
0000
0003
2Ch
B6h
B7h
Manufacturer code
Top boot block device code
Bottom boot block device code
Reserved
“QR”
“Y”
V
V
V
V
Typical timeout for single byte/word program, 2
Typical timeout for maximum size multiple byte/word program, 2
supported
Typical timeout for individual block erase, 2
Typical timeout for full chip erase, 2
Maximum timeout for single byte/word program, 2
Maximum timeout for maximum size multiple byte/word program, 2
supported
Maximum timeout for individual block erase, 2
Maximum timeout for full chip erase, 2
Device size, 2
Bus interface, x8 = 0, x16 = 1, x8/x16 = 2
Flash device interface description, 0000 = async
Maximum number of bytes in multibyte program or page, 2
Number of erase block regions within device (4K words and 32K words)
Top boot block device erase block region information 1, 96 blocks …
Bottom boot block device erase block region information 1, 8 blocks …
Top boot block device …..of 64KB
Bottom boot block device …..of 8KB
31 blocks of
……64KB
Top boot block device …8 blocks of
Bottom boot block device …96 blocks of
Primary OEM command set
Address for primary extended table
Alternate OEM command set
Address for OEM extended table
DD
DD
PP
PP
MIN for Erase/Write; Bit7–Bit4 Volts in Hex, Bit3–Bit0 100mV in BCD, 0000 = V
MAX for Erase/Write; Bit7–Bit4 Volts in Hex, Bit3–Bit0 100mV in BCD, 0000 = V
MIN for Erase/Write; Bit7–Bit4 Volts in BCD, Bit3–Bit0 100mV in BCD
MAX for Erase/Write; Bit7–Bit4 Volts in BCD, Bit3–Bit0 100mV in BCD
n
bytes
(continued on next page)
Table 15
ASYNC/PAGE/BURST FLASH MEMORY
CFI
48
n
DESCRIPTION
ms, 0000 = not supported
n
ms, 0000 = not supported
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ms, 0000 = not supported
n
n
ms, 0000 = not supported
µs, 0000 = not supported
n
µs, 0000 = not supported
n
n
µs, 0000 = not
n
4 MEG x 16
µs, 0000 = not
©2002, Micron Technology, Inc.
ADVANCE
PP
PP
pin
pin