SST34WA3283 Silicon Storage Technology, Inc., SST34WA3283 Datasheet - Page 37

• Manufacturer Part Number: SST34WA3283
• Description: 32 Mbit Burst Mode Concurrent Superflash Combomemory 32 Mbit Burst Mode Concurrent Superflash Combomemory
• Manufacturer: Silicon Storage Technology, Inc.

32 Mbit Burst Mode Concurrent SuperFlash ComboMemory
SST34WA32A3 / SST34WA32A4 / SST34WA3283 / SST34WA3284
DC Characteristics
TABLE 28: DC Operating Characteristics
TABLE 29: Capacitance (Ta = 25°C, f=1 Mhz, other pins open)
TABLE 30: Reliability Characteristics
©2007 Silicon Storage Technology, Inc.
I
I
I
I
I
I
V
V
V
V
V
V
V
V
Parameter
CI/O
CIN
Symbol
NEND
TDR
ILTH
Symbol Parameter
DD
DDB
SB
LI
LO
H
IL
IH
OLF
OHF
OLS
OHS
H
LKO
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
1
Flash Asynchronous Read
PSRAM Asynchronous Read/Write
Program and Erase
Concurrent Read/Write
Flash Active V
PSRAM Initial Access, Burst Read/Write
PSRAM Continuous Burst Write
Standby V
Input Leakage Current
Output Leakage Current
Supervoltage Current for ACC Eight-Word Pro-
gram
Input Low Voltage
Input High Voltage
Flash Output Low Voltage
Flash Output High Voltage
PSRAM Output Low Voltage
PSRAM Output High Voltage
Supervoltage for ACC Eight-Word Program
Flash Low V
Parameter
Endurance
Data Retention
Latch Up
DD
DD
Current
DD
Lock-Out Voltage
Burst Read Current
Description
I/O Pin Capacitance
Input Capacitance
Minimum Specification
100,000
100
100 + I
DD
V
DD
Freq
MHz
MHz
54
= 1.7-1.95V
5
V
37
V
0.8V
DD
DD
11.4
Min
VI/O = 0V
VIN = 0V
Test Condition
1.0
- 0.4
-0.1
DD
Limits
0.2V
Max
120
0.4
0.1
1.4
10
20
40
60
30
25
30
10
12
1
1
DD
Units
Cycles
Years
mA
Units
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
V
V
Test Method
JEDEC Standard
JEDEC Standard A103
JEDEC Standard 78
Test Conditions
BEF#=V
background is 55AAH
BEF#=V
BEF#=WE#=V
BEF#=V
BEF#=V
Array background is 55AAH
BEF#=V
Array background is 0H
BEF#=V
OE# = V
BEF#= V
BES# = V
RST#= V
All other inputs= 0.1V or V
V
V
V
V
V
I
I
I
BCR[5:4]=01b
I
BCR[5:4]=01b
V
OL
OH
OL
OH
OUT
IN
DD
DD
DD
DD
=100 µA, V
=0.2 mA, V
=-100 µA, V
=-0.2 mA, V
=GND to V
=V
=V
=V
10 pF
Maximum
10 pF
= 1.8V
=GND to V
DD
DD
DD
IL
IH
IL
IL
IH
IH
IH
DD
DD
, OE#=WE#=V
, OE#=V
, OE#=V
DD
Max, A
Min
Max
, BES#=V
, BES#=V
, BES#=V
Advance Information
-0.1V
-0.1V
-0.1V
DD
DD
IL
DD
DD
DD
S71358-01-000
, OE#=A
DD
=V
=V
CC
, V
=V
=V
IH
IH
, V
=V
DD
DD
DD
IL
IL
IL
, WE#=V
DD
DD
, OE# = V
, WE#=V
DD
H
=V
Min
Min,
Min
Min,
Max
=V
IH
CC
DD
, Array
DD
DD
T29.0 1358
=V
T28.0 1358
Max
-0.1V
IH
IH
Max
IL
,
IH,
11/07
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