s908ey8ad4cfjer Freescale Semiconductor, Inc, s908ey8ad4cfjer Datasheet - Page 37

• Manufacturer Part Number: s908ey8ad4cfjer
• Description: M68hc08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

2.6.2 FLASH Page Erase Operation
Use this step-by-step procedure to erase a page (64 bytes) of FLASH memory to read as logic 1:
In applications that require more than 1000 program/erase cycles, use the 4 ms page erase specification
to get improved long-term reliability. Any application can use this 4 ms page erase specification. However,
in applications where a FLASH location will be erased and reprogrammed less than 1000 times, and
speed is important, use the 1 ms page erase specification to get a shorter cycle time.
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10. After time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of the block to be erased.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps.
Due to the security feature (see
of the FLASH (0xFFDC–0xFFFF), which contains the security bytes,
cannot be erased by Page Erase Operation. It can only be erased with the
Mass Erase Operation.
RCV
(typical 1 µs), the memory can be accessed in read mode again.
NVS
Erase
NVH
(minimum 10 µs).
(minimum 5 µs).
MC68HC908EY16 • MC68HC908EY8 Data Sheet, Rev. 10
(minimum 1 ms or 4 ms).
19.3 Monitor Module
NOTE
NOTE
(MON)) the last page
FLASH Memory (FLASH)
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