mt48lc1m16a1 Micron Semiconductor Products, mt48lc1m16a1 Datasheet - Page 30

• Manufacturer Part Number: mt48lc1m16a1
• Description: Synchronous Dram
• Manufacturer: Micron Semiconductor Products

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature, T
Storage Temperature (plastic) .......... -55°C to +150°C
Power Dissipation .................................................. 1W
I
(Notes: 1, 6, 11, 13) (-40°C ≤ T
16Mb: x16 IT SDRAM
16MSDRAMx16IT.p65 – Rev. 5/99
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 6) (-40°C ≤ T
DD
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
CAS latency = 3
STANDBY CURRENT: Power-Down Mode;
CKE = LOW; All banks idle
STANDBY CURRENT: Active Mode; CS# = HIGH;
CKE = HIGH; All banks active after
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active, CAS latency = 3
AUTO REFRESH CURRENT:
CS# = HIGH; CKE = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
SPECIFICATIONS AND CONDITIONS
Relative to V
Relative to V
DD
, V
SS
SS
DD
IN
................................ -1V to +4.6V
................................ -1V to +4.6V
Q Supply
≤ V
A
DD
≤ +85°C; V
OUT
OUT
A
(ambient) -40°C to +85°C
= 4mA)
t
= -4mA)
t
RC = 15.625µs; CAS latency = 3;
A
RC =
≤ +85°C; V
DD
t
RC (MIN);
, V
t
RCD met;
DD
Q = +3.3V ±0.3V)
DD
, V
DD
Q = +3.3V ±0.3V)
30
OUT
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
≤ V
DD
SYMBOL
Q
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
V
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
2
3
4
5
6
DD
V
V
V
, V
V
I
OZ
I
OH
OL
IH
IL
I
DD
145
140
45
45
Q
-6
2
1
MIN
-0.3
-10
2.2
2.4
-5
MAX
3
–
140
130
40
40
-7
2
1
V
DD
MAX
3.6
0.8
0.4
10
-8A
135
100
5
–
35
35
+ 0.3
2
1
16Mb: x16
IT SDRAM
UNITS NOTES
UNITS NOTES
©1999, Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
µA
µA
V
V
V
V
V
18, 19,
19, 26
19, 26
19, 26
3, 18,
3, 12,
3, 18,
3, 12,
22
22
26
26
4