mt45w4mw16b Micron Semiconductor Products, mt45w4mw16b Datasheet - Page 31

• Manufacturer Part Number: mt45w4mw16b
• Description: Async/page/burst Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Figure 23:
Table 11:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Description
Deep Power-Down
70
60
50
40
30
20
10
0
-30
Deep Power-Down Specifications
Typical Refresh Current vs. Temperature (I
-20
-10
Note:
0
Typical I
10
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
V
IN
SB
Temperature (°C)
= V
20
currents for each PAR setting with the appropriate TCR selected.
Conditions
CC
Q or 0V; +25°C
30
40
31
50
TCR
60
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
70
I
ZZ
80
Electrical Characteristics
90
©2003 Micron Technology, Inc. All rights reserved.
Typ
10
PAR = Full Array
PAR = 1/2 of Array
PAR = 1/4 of Array
PAR = 1/8 of Array
PAR = None of Array
Units
µA