mt45w4mw16b Micron Semiconductor Products, mt45w4mw16b Datasheet - Page 58

• Manufacturer Part Number: mt45w4mw16b
• Description: Async/page/burst Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Figure 47:
Table 45:
Table 46:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AS
AVH
AVS
AW
BW
CBPH
CVS
CW
DH
AA
AADV
AVH
AVS
BHZ
BLZ
CO
DQ[15:0]
LB#/UB#
A[21:0]
IN/OUT
ADV#
WAIT
WE#
OE#
CE#
WRITE Timing Parameters – Async WRITE Followed by Async READ
READ Timing Parameters – Async WRITE Followed by Async READ
Asynchronous WRITE Followed by Asynchronous READ
Min
Min
10
10
10
70
70
10
70
0
5
5
0
5
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
-70x
-70x
Notes: 1. When configured for synchronous mode (BCR[15] = 0), CE# must remain HIGH for at least
Max
Max
t VPH
70
70
70
8
High-Z
VALID ADDRESS
t AVS
t WHZ
t AS
t VP
t CVS
t CW
5ns (
required after CE#-controlled WRITEs.
Min
Min
t WP
10
85
85
10
85
10
10
0
5
5
0
5
DATA
t AVH
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
t
t DH
CPH) to schedule the appropriate internal refresh operation. Otherwise,
-856
-856
t WPH
t WC
Max
Max
t AS
85
85
85
VALID ADDRESS
8
t AW
t BW
t VS
t DW
DATA
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
νs
t WR
58
t CPH
Symbol
t
t
t
t
t
t
t
t
t
Symbol
t
t
t
t
t
t
t
DW
VP
VPH
VS
WC
WHZ
WP
WPH
WR
CVS
HZ
LZ
OE
OHZ
OLZ
VP
1
t VP
V
V
t CVS
t AVS
OH
OL
VALID ADDRESS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t AVH
High-Z
t BLZ
t LZ
t AADV
t CO
Min
Min
23
10
10
70
70
46
10
10
10
10
0
5
-70x
-70x
t AA
t OLZ
DON’T CARE
Max
Max
t OE
20
8
8
8
©2003 Micron Technology, Inc. All rights reserved.
Min
Min
Timing Diagrams
23
10
10
85
85
55
10
10
10
10
OUTPUT
0
5
VALID
-856
UNDEFINED
-856
t HZ
t OHZ
t BHZ
Max
Max
20
8
8
8
t
CPH is only
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns