mt45w4mw16b Micron Semiconductor Products, mt45w4mw16b Datasheet - Page 55

• Manufacturer Part Number: mt45w4mw16b
• Description: Async/page/burst Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Figure 44:
Table 39:
Table 40:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
ABA
ACLK
BOE
CBPH
CEW
CLK
CSP
AS
AW
BW
CW
DH
DW
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IL
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
OL
OL
Burst READ Timing Parameters
Asynchronous WRITE Timing Parameters – WE#-Controlled
IH
IH
IL
OH
OH
Burst READ Followed by Asynchronous WRITE (WE#-Controlled)
Min
Min
12.5
4.5
70
70
70
23
5
1
0
0
-708
-70x
Notes: 1. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
READ Burst Identified
Max
Max
46.5
t
ADDRESS
t
7.5
SP
20
20
20
CSP
t
t
VALID
(WE# = HIGH)
9
t
SP
SP
t
SP
CEW
t
HD
t
t
HD
HD
t
HD
vided every
tions: a) clocked CE# HIGH, or b) CE# HIGH for greater than 15ns. Note that CellularRAM
Working Group 1.0 specification requires CE# to be clocked HIGH to terminate the burst.
Min
Min
15
85
85
85
23
High-Z
-706/-856
5
1
5
0
-856
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Max
Max
7.5
t
56
11
20
20
20
ABA
0
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
t
ACLK
t
Units
Units
OLZ
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
BOE
t
KHTL
t
CLK
OUTPUT
t
55
HD
VALID
t
Symbol
t
t
t
t
t
t
Symbol
t
t
t
t
t
KOH
HD
HZ
KHTL
KOH
OHZ
SP
HZ
WC
WP
WPH
WR
t
t
OHZ
HZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
CBPH
High-Z
1
t
CEW
Min
Min
70
46
10
t
AS
2
2
3
0
-708
-70x
Max
Max
8
9
8
8
t
t
DON’T CARE
CW
BW
ADDRESS
t
AW
VALID
t
WP
t
WC
©2003 Micron Technology, Inc. All rights reserved.
Min
Min
85
55
10
-706/-856
2
2
3
0
Timing Diagrams
-856
t
VALID
INPUT
DW
t
HZ
Max
Max
11
8
8
8
UNDEFINED
t
WR
t
WPH
t
DH
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns