mt45w4mw16b Micron Semiconductor Products, mt45w4mw16b Datasheet - Page 39

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mt45w4mw16b

Manufacturer Part Number
mt45w4mw16b
Description
Async/page/burst Cellularramtm 1.0 Memory
Manufacturer
Micron Semiconductor Products
Datasheet

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Figure 28:
Table 20:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
t
t
t
t
t
t
t
t
t
AA
AADV
AVH
AVS
BA
BHZ
BLZ
CEW
CO
Asynchronous READ Timing Parameters Using ADV#
Asynchronous READ Using ADV#
Min
10
10
5
1
-70x
Max
7.5
70
70
70
70
8
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CE#
Min
10
10
5
1
V
V
V
V
V
V
V
V
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
OH
IH
IL
IL
IL
IL
IL
IL
OL
IL
-856
Max
t VPH
7.5
85
85
85
85
8
High-Z
t CEW
High-Z
t CVS
t VP
VALID ADDRESS
Units
t AVS
ns
ns
ns
ns
ns
ns
ns
ns
ns
t LZ
t AADV
t BLZ
t CO
t AVH
t AA
39
t OLZ
t BA
Symbol
t
t
t
t
t
t
t
t
CVS
HZ
LZ
OE
OHZ
OLZ
VP
VPH
t OE
DON’T CARE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALID OUTPUT
t
HZ
Min
10
10
10
10
5
-70x
t
t
UNDEFINED
t
HZ
OHZ
BHZ
High-Z
Max
20
8
8
©2003 Micron Technology, Inc. All rights reserved.
Min
Timing Diagrams
10
10
10
10
5
-856
Max
20
8
8
Units
ns
ns
ns
ns
ns
ns
ns
ns

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