mt45w4mw16b Micron Semiconductor Products, mt45w4mw16b Datasheet - Page 35

• Manufacturer Part Number: mt45w4mw16b
• Description: Async/page/burst Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Table 16:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Parameter
Address and ADV# LOW Setup Time
Address Hold from ADV# Going HIGH
Address Setup to ADV# Going HIGH
Address Valid to End of WRITE
LB#/UB# Select to End of WRITE
CE# LOW to WAIT Valid
Async Address-to-Burst Transition Time
CE# HIGH between Subsequent Asynchronous Operations
CE# LOW to ADV# HIGH
Chip Enable to End of WRITE
Data Hold from WRITE Time
Data WRITE Setup Time
Chip Disable to WAIT High-Z Output
Chip Enable to Low-Z Output
End WRITE to Low-Z Output
ADV# Pulse Width
ADV# Pulse Width HIGH
ADV# Setup to End of WRITE
WRITE Cycle Time
WRITE to DQ High-Z Output
WRITE Pulse Width
WRITE Pulse Width HIGH
WRITE Recovery Time
Asynchronous WRITE Cycle Timing Requirements
Notes: 1. High-Z to Low-Z timings are tested with the circuit shown in Figure 25 on page 32. The
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 25 on page 32. The
3. WE# LOW time must be limited to
Low-Z timings measure a 100mV transition away from the High-Z (V
either V
High-Z timings measure a 100mV transition from either V
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
OH
or V
OL
.
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AS
AVH
AVS
AW
BW
CEW
CKA
CPH
CVS
CW
DH
DW
HZ
LZ
OW
VP
VPH
VS
WC
WHZ
WP
WPH
WR
35
t
CEM (8µs).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
10
70
70
70
10
70
23
10
10
10
70
70
46
10
0
5
1
5
0
5
0
-70x
Max
7.5
8
8
Electrical Characteristics
Min
OH
10
85
85
85
10
85
23
10
10
10
85
85
55
10
0
5
1
5
0
5
0
or V
-856
©2003 Micron Technology, Inc. All rights reserved.
OL
Max
7.5
8
8
toward V
CC
Q/2) level toward
Units
νσ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Notes
1
1
2
3