mt45w4mw16b Micron Semiconductor Products, mt45w4mw16b Datasheet - Page 43

• Manufacturer Part Number: mt45w4mw16b
• Description: Async/page/burst Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Figure 32:
Table 24:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
t
t
t
t
t
t
t
t
t
ABA
ACLK
BOE
CBPH
CEM
CEW
CLK
CSP
HD
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Burst READ Timing Parameters – 4-Word Burst with LB#/UB#
4-Word Burst READ Operation (with LB#/UB#)
Min
12.5
4.5
5
1
2
-708
High-Z
Notes: 1. Non-default BCR settings for 4-word burst READ operation with LB#/UB#: Latency code
READ Burst Identified
Max
46.5
t SP
t CSP
ADDRESS
7.5
20
20
20
t SP
t SP
(WE# = HIGH)
t SP
9
8
VALID
t CEW
2. Clock rates below 50 MHz (
t HD
t HD
t HD
t HD
two (three clocks); WAIT active LOW; WAIT asserted during delay.
configured with a burst length of four.
Min
High-Z
15
-706/-856
5
1
5
2
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Max
t ABA
7.5
56
11
20
20
20
8
t OLZ
Units
t BOE
t ACLK
ns
ns
ns
ns
µs
ns
ns
ns
ns
t KHTL
t CLK
t
OUTPUT
CLK > 20ns) are allowed as long as
VALID
43
t CEM
Symbol
t
t
t
t
t
t
t
t
HZ
KHTL
KHZ
KLZ
KOH
OHZ
OLZ
SP
t KOH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUTPUT
VALID
t KHZ
Min
3
2
2
5
3
-708
High-Z
Max
t KLZ
8
9
8
5
8
t
CSP specifications are met. BCR
DON’T CARE
©2003 Micron Technology, Inc. All rights reserved.
OUTPUT
VALID
Min
-706/-856
3
2
2
5
3
Timing Diagrams
t HD
t KHZ
t
t
OHZ
HZ
Max
11
t CBPH
8
8
5
8
UNDEFINED
High-Z
Units
ns
ns
ns
ns
ns
ns
ns
ns