mt45w4mw16b Micron Semiconductor Products, mt45w4mw16b Datasheet - Page 33

• Manufacturer Part Number: mt45w4mw16b
• Description: Async/page/burst Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Table 14:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Parameter
Address Access Time
ADV# Access Time
Page Access Time
Address Hold from ADV# HIGH
Address Setup to ADV# HIGH
LB#/UB# Access Time
LB#/UB# Disable to DQ High-Z Output
LB#/UB# Enable to Low-Z Output
Maximum CE# Pulse Width
CE# LOW to WAIT Valid
Chip Select Access Time
CE# LOW to ADV# HIGH
Chip Disable to DQ and WAIT High-Z Output
Chip Enable to Low-Z Output
Output Enable to Valid Output
Output Hold from Address Change
Output Disable to DQ High-Z Output
Output Enable to Low-Z Output
Page Cycle Time
READ Cycle Time
ADV# Pulse Width LOW
ADV# Pulse Width HIGH
1
Asynchronous READ Cycle Timing Requirements
Notes: 1. All tests are performed with the outputs configured for full drive strength (BCR[5] = 0).
2. Page-mode enabled only.
3. High-Z to Low-Z timings are tested with the circuit shown in Figure 25 on page 32. The
4. Low-Z to High-Z timings are tested with the circuit shown in Figure 25 on page 32. The
Low-Z timings measure a 100mV transition away from the High-Z (V
either V
High-Z timings measure a 100mV transition from either V
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
OH
or V
OL
.
33
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AA
AADV
APA
AVH
AVS
BA
BHZ
BLZ
CEM
CEW
CO
CVS
HZ
LZ
OE
OH
OHZ
OLZ
PC
RC
VP
VPH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
10
10
10
10
20
70
10
10
5
1
5
5
-70x
Max
7.5
70
70
20
70
70
20
8
8
8
8
Electrical Characteristics
OH
Min
10
10
10
10
25
85
10
10
5
1
5
5
or V
-856
©2003 Micron Technology, Inc. All rights reserved.
OL
Max
7.5
toward V
85
85
25
85
85
20
CC
8
8
8
8
Q/2) level toward
Units
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Notes
4
3
2
4
3
4
3