MT46V128M8 MICRON [Micron Technology], MT46V128M8 Datasheet - Page 32

• Manufacturer Part Number: MT46V128M8
• Description: DOUBLE DATA RATE (DDR) SDRAM
• Manufacturer: MICRON [Micron Technology]

NOTE:
09005aef8076894f
1gbDDRx4x8x16_2.fm - Rev. A 3/03 EN
1. DI b, etc. = data-in for column b, etc.
2. b', etc. = the next data-in following DI b, etc., according to the programmed burst order.
3. Programmed burst length = 2, 4, or 8 in cases shown.
4. Each WRITE command may be to any bank.
COMMAND
ADDRESS
DQS
CK#
DM
DQ
CK
WRITE
Bank,
Col b
T0
t
DQSS (NOM)
WRITE
Bank,
Col x
Figure 22: Random WRITE Cycles
T1
DI
b
T1n
DI
b'
WRITE
Bank,
Col n
T2
DI
x
T2n
32
DI
x'
WRITE
Bank,
Col a
T3
DI
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DON’T CARE
T3n
DI
n'
WRITE
Bank,
Col g
T4
DI
a
TRANSITIONING DATA
T4n
DI
a'
1Gb: x4, x8, x16
DDR SDRAM
T5
NOP
DI
g
PRELIMINARY
©2003 Micron Technology. Inc.
T5n
DI
g'