NAND02GW3B2CN1F STMICROELECTRONICS [STMicroelectronics], NAND02GW3B2CN1F Datasheet - Page 40

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NAND02GW3B2CN1F

Manufacturer Part Number
NAND02GW3B2CN1F
Description
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Program and Erase Times and Endurance cycles
9
40/62
Program and Erase Times and Endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in
Table 18.
Page Program Time
Block Erase Time
Program/Erase Cycles (per block)
Data Retention
Table
Program, Erase Times and Program Erase Endurance Cycles
Parameters
18.
100,000
Min
10
NAND Flash
Typ
200
NAND01G-B2B, NAND02G-B2C
2
Max
700
3
cycles
years
Unit
ms
µs

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