NAND02GW3B2CN1F STMICROELECTRONICS [STMicroelectronics], NAND02GW3B2CN1F Datasheet - Page 42

• Manufacturer Part Number: NAND02GW3B2CN1F
• Description: 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

DC And AC parameters
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DC And AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 20: Operating and AC Measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 20.
Table 21.
1. T
2. Input/output capacitances double in stacked devices
Supply Voltage (V
Ambient Temperature (T
Load Capacitance (C
(1 TTL GATE and C
Input Pulses Voltages
Input and Output Timing Ref. Voltages
Output Circuit Resistor R
Input Rise and Fall Times
Symbol
C
C
A
I/O
IN
= 25°C, f = 1 MHz. C
Input Capacitance
Input/Output
Capacitance
Operating and AC Measurement Conditions
Capacitance
DD
Parameter
L
)
)
L
)
A
IN
ref
)
(2)
Parameter
and C
(1)
I/O
are not 100% tested
3V devices (2.7 - 3.6V)
Test Condition
V
V
1.8V devices
1.8V devices
1.8V devices
3V devices
3V devices
IN
IL
Conditions. Designers should check that the
Grade 1
Grade 6
= 0V
= 0V
NAND01G-B2B, NAND02G-B2C
Typ
Min
–40
1.7
2.7
0.4
0
0
NAND Flash
V
8.35
DD
30
50
5
/2
Max
10
10
Max
1.95
V
3.6
2.4
70
85
DD
Units
Unit
pF
pF
kΩ
°C
°C
pF
pF
ns
V
V
V
V
V