NAND02GW3B2CN1F STMICROELECTRONICS [STMicroelectronics], NAND02GW3B2CN1F Datasheet - Page 51

• Manufacturer Part Number: NAND02GW3B2CN1F
• Description: 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

NAND01G-B2B, NAND02G-B2C
Figure 25. Page Read operation AC waveform
1. A fifth address cycle is required for 2Gb devices only.
RB
I/O
CL
AL
W
R
E
Command
Code
00h
cycle 1
Add.N
tWLWL
Address N Input
cycle 2
Add.N
cycle 3
Add.N
cycle 4
Add.N
tWHBH
cycle 5
Add.N
tWHBL
tBLBH1
30h
Busy
tRLRH
from Address N to Last Byte or Word in Page
Data
tALLRL2
N
Data
N+1
(Read Cycle time)
Data Output
tRLRL
Data
N+2
DC And AC parameters
tEHQZ
tRHQZ
Data
Last
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