NAND02GW3B2CN1F STMICROELECTRONICS [STMicroelectronics], NAND02GW3B2CN1F Datasheet - Page 43

• Manufacturer Part Number: NAND02GW3B2CN1F
• Description: 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

NAND01G-B2B, NAND02G-B2C
Table 22.
1. Leakage current and standby current double in stacked devices
I
Symbol
OL
V
I
I
I
I
V
V
V
DD1
DD2
DD3
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
DC Characteristics, 1.8V Devices
Figure 18. Equivalent Testing Circuit for AC Characteristics Measurement
V
DD
Standby Current (CMOS)
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Output Low Current (RB)
Operating
Input Leakage Current
Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Parameter
Sequential
Program
Erase
Read
(1)
(1)
NAND Flash
(1)
V
E=V
V
OUT
Test Conditions
t
IN
C L
RLRL
I
I
OH
E=V
= 0 to V
WP=0/V
V
OL
IL,
= 0 to V
OL
I
= -100µA
= 100µA
GND
OUT
minimum
DD
= 0.1V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
V DD
V
V
GND
DD
DD
Min
-0.3
3
-
-
-
-
-
-
-
-
-0.4
-0.1
2R ref
2R ref
Ai11085
DC And AC parameters
Typ
10
8
8
8
4
-
-
-
-
-
-
-
V
DD
Max
±10
±10
0.4
0.1
1.1
15
15
15
50
-
+0.3
Unit
43/62
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V