NAND02GW3B2CN1F STMICROELECTRONICS [STMicroelectronics], NAND02GW3B2CN1F Datasheet - Page 47

• Manufacturer Part Number: NAND02GW3B2CN1F
• Description: 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

NAND01G-B2B, NAND02G-B2C
1. The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See
2.
3. During a Program/Erase Enable Operation, t
4. ES = Electronic Signature.
Figure 19. Command Latch AC waveforms
Figure
During a Program/Erase Disable Operation, t
t
WHWH
I/O
CL
AL
W
E
33.
is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.
(ALSetup time)
H(E Setup time)
(CL Setup time)
tALLWH
tELWH
tCLHWH
(Data Setup time)
tDVWH
WW
WW
is the delay from WP high to W High.
is the delay from WP Low to W High.
Command
tWLWH
tWHDX
(Data Hold time)
(E Hold time)
tWHEH
(CL Hold time)
tWHCLL
(AL Hold time)
tWHALH
DC And AC parameters
Figure
31,
Figure 32
and
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