HYB18L128160BC-7.5 QIMONDA [Qimonda AG], HYB18L128160BC-7.5 Datasheet - Page 24

• Manufacturer Part Number: HYB18L128160BC-7.5
• Description: DRAMs for Mobile Applications 128-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

Figure 19
2.4.5.3
DQM may be used to suppress read data and place the output buffers into High-Z state. The generic timing
parameters as listed in
will continue as programmed.
Figure 20
2.4.5.4
A READ burst may be followed by or truncated with a WRITE command. The WRITE command can be performed
to the same or a different (active) bank. Care must be taken to avoid bus contention on the DQs; therefore it is
recommended that the DQs are held in High-Z state for a minimum of 1 clock cycle. This can be achieved by either
delaying the WRITE command, or suppressing the data-out from the READ by pulling DQM HIGH two clock cycles
Data Sheet
Clock Suspend Mode for READ Bursts
READ - DQM Operation
READ Burst - DQM Operation
READ to WRITE
Table 11
also apply to this DQM operation. The read burst in progress is not affected and
24
Functional DescriptionCommands
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
05282004-NZNK-8T0D
Rev. 1.71, 2007-01