HYB18L128160BC-7.5 QIMONDA [Qimonda AG], HYB18L128160BC-7.5 Datasheet - Page 32

• Manufacturer Part Number: HYB18L128160BC-7.5
• Description: DRAMs for Mobile Applications 128-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

2.4.6.3
DQM may be used to mask write data: when asserted HIGH, input data will be masked and no write will be
performed. The generic timing parameters as listed in
in progress is not affected and will continue as programmed.
Figure 32
2.4.6.4
A WRITE burst may be followed by, or truncated with a READ command. The READ command can be performed
to the same or a different (active) bank. With the registration of the READ command, data inputs will be ignored
and no WRITE will be performed, as shown in
Figure 33
Data Sheet
WRITE - DQM Operation
WRITE Burst - DQM Operation
WRITE to READ
WRITE to READ Timing
Figure
Table 12
33.
32
also apply to this DQM operation. The write burst
Functional DescriptionCommands
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
05282004-NZNK-8T0D
Rev. 1.71, 2007-01