S25FL512SAGMFIG13 Spansion, S25FL512SAGMFIG13 Datasheet - Page 115

• Manufacturer Part Number: S25FL512SAGMFIG13
• Description: Flash 512Mb 3V 133MHz Serial NOR Flash
• Manufacturer: Spansion

Specifications of S25FL512SAGMFIG13

• Rohs: yes
• Memory Type: Flash
• Memory Size: 512 MB
• Architecture: Uniform
• Timing Type: Asynchronous
• Interface Type: SPI
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SO-16

June 13, 2012 S25FL512S_00_04
10.8.6
10.8.7
PPB Program (PPBP E3h)
PPB Erase (PPBE E4h):
location must be read with a separate PPB Read command. The maximum operating clock frequency for the
PPB Read command is 133 MHz.
Before the PPB Program (PPBP) command can be accepted by the device, a Write Enable (WREN)
command must be issued. After the Write Enable (WREN) command has been decoded, the device will set
the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The PPBP command is entered by driving CS# to the logic low state, followed by the instruction, followed by
the 32-bit address selecting location zero within the desired sector (note, the high order address bits not used
by a particular density device must be zero).
The PPBP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same
manner as any other programming operation.
CS# must be driven to the logic high state after the last bit of address has been latched in. If not, the PPBP
command is not executed. As soon as CS# is driven to the logic high state, the self-timed PPBP operation is
initiated. While the PPBP operation is in progress, the Status Register may be read to check the value of the
Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a 1 during the self-timed PPBP operation, and
is a 0 when it is completed. When the PPBP operation is completed, the Write Enable Latch (WEL) is set to a
0.
The PPB Erase (PPBE) command sets all PPB bits to 1. Before the PPB Erase command can be accepted by
the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the
Write Enable Latch (WEL) in the Status Register to enable any write operations.
The instruction E4h is shifted into SI by the rising edges of the SCK signal.
CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on
SI. This will initiate the beginning of internal erase cycle, which involves the pre-programming and erase of
the entire PPB memory array. Without CS# being driven to the logic high state after the eighth bit of the
instruction, the PPB erase operation will not be executed.
With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to
check if the operation has been completed. The WIP bit will indicate a 1 when the erase cycle is in progress
and a 0 when the erase cycle has been completed. Erase suspend is not allowed during PPB Erase.
Phase
SCK
CS#
S O
Phase
S I
SCK
CS#
S O
S I
D a t a
7
7
6
Instruction
5
S h e e t
6
4 3
Figure 10.65 PPBRD (E2h) Command Sequence
Figure 10.66 PPBP (E3h) Command Sequence
5
2
1 0 31
( P r e l i m i n a r y )
Instruction
4
S25FL512S
Address
3
1 0
2
7
6 5
1
Register
4
3 2
0
1
31
0
7 6
Repeat Register
Address
5
1
4
3
2 1 0
0
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