S25FL512SAGMFIG13 Spansion, S25FL512SAGMFIG13 Datasheet - Page 120

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S25FL512SAGMFIG13

Manufacturer Part Number
S25FL512SAGMFIG13
Description
Flash 512Mb 3V 133MHz Serial NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S25FL512SAGMFIG13

Rohs
yes
Memory Type
Flash
Memory Size
512 MB
Architecture
Uniform
Timing Type
Asynchronous
Interface Type
SPI
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
SO-16
10.10 Embedded Algorithm Performance Tables
120
Notes:
1. Typical program and erase times assume the following conditions: 25°C, V
2. Under worst case conditions of 90°C; 100,000 cycles max.
3. Industrial temperature range / Automotive In-Cabin temperature range.
Program Suspend Latency (t
Program Resume to next Program
Suspend (t
Erase Suspend Latency (t
Erase Resume to next Erase Suspend
(t
ERS)
Symbol
t
t
t
t
PP
SE
BE
W
PRS
)
Parameter
Parameter
WRR Write Time
Page Programming (512 bytes)
Sector Erase Time
(256-kB logical sectors = 4 x 64 kB physical sectors)
Bulk Erase Time (S25FL512S)
ESL
PSL
)
)
Table 10.8 Program Suspend AC Parameters
D a t a
Table 10.7 Program and Erase Performance
Table 10.9 Erase Suspend AC Parameters
0.06
0.06
Min
Min
Parameter
S25FL512S
S h e e t
Typical
Typical
100
100
( P r e l i m i n a r y )
Max
Max
40
45
CC
Unit
= 3.0V; 10,000 cycles; checkerboard data pattern.
µs
µs
Unit
µs
µs
the WIP bit is 0
Minimum is the time needed to issue the next
Program Suspend command but ≥ typical periods
are needed for Program to progress to completion
The time from Program Suspend command until
the WIP bit is 0
Minimum is the time needed to issue the next
Erase Suspend command but ≥ typical periods
are needed for the Erase to progress to
completion
The time from Erase Suspend command until
Min
S25FL512S_00_04 June 13, 2012
Typ
560
340
520
103
(1)
Comments
Comments
750/1300
Max
2000
2600
460
(2)
(3)
Unit
sec
ms
ms
µs

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