TRK-USB-MPC5643L Freescale Semiconductor, TRK-USB-MPC5643L Datasheet - Page 9

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TRK-USB-MPC5643L

Manufacturer Part Number
TRK-USB-MPC5643L
Description
Development Boards & Kits - Other Processors StarTrakMiniUSG MPC5643L
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of TRK-USB-MPC5643L

Rohs
yes
Product
Starter Kits
Tool Is For Evaluation Of
MPC5643L
Core
Five Stage Pipeline
Interface Type
LIN, DSPI
Operating Supply Voltage
3 V to 3.6 V
Data Bus Width
32 bit, 64 bit
Description/function
Starter Kit for MPC5643L
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
For Use With
MPC5643L
1.5.5
This device includes programmable, non-volatile flash memory. The non-volatile memory (NVM) can be used for instruction
storage or data storage, or both. The flash memory module interfaces with the system bus through a dedicated flash memory
array controller. It supports a 64-bit data bus width at the system bus port, and a 128-bit read data interface to flash memory.
The module contains four 128-bit prefetch buffers. Prefetch buffer hits allow no-wait responses. Buffer misses incur a 3 wait
state response at 120 MHz.
The flash memory module provides the following features
1.5.6
The MPC5643L SRAM provides a general-purpose single port memory.
ECC handling is done on a 32-bit boundary for data and it is extended to the address to have the highest possible diagnostic
coverage including the array internal address decoder.
The SRAM module provides the following features:
1.5.7
The following list summarizes the key features of the flash memory controller:
Freescale Semiconductor
1 MB of flash memory in unique multi-partitioned hard macro
Sectorization: 16 KB + 2 × 48 KB + 16 KB + 2 × 64 KB + 2 × 128 KB + 2 × 256 KB
EEPROM emulation (in software) within same module but on different partition
16 KB test sector and 16 KB shadow block for test, censorship device and user option bits
Wait states:
— 3 wait states for frequencies =< 120 MHz
— 2 wait states for frequencies =< 80 MHz
— 1 wait state for frequencies =< 60 MHz
Flash memory line 128-bit wide with 8-bit ECC on 64-bit word (total 144 bits)
Accessed via a 64-bit wide bus for write and a 128-bit wide array for read operations
1-bit error correction, 2-bit error detection
System SRAM: 128 KB
ECC on 32-bit word (syndrome of 7 bits)
— ECC covers SRAM bus address
1-bit error correction, 2-bit error detection
Wait states:
— 1 wait state for frequencies =< 120 MHz
— 0 wait states for frequencies =< 80 MHz
Single AHB port interface supports a 64-bit data bus. All AHB aligned and unaligned reads within the 32-bit container
are supported. Only aligned word writes are supported.
Array interfaces support a 128-bit read data bus and a 64-bit write data bus for each bank.
Code flash (bank0) interface provides configurable read buffering and page prefetch support.
— Four page-read buffers (each 128 bits wide) and a prefetch controller support speculative reading and optimized
Single-cycle read responses (0 AHB data-phase wait states) for hits in the buffers. The buffers implement a
least-recently-used replacement algorithm to maximize performance.
Programmable response for read-while-write sequences including support for stall-while-write, optional stall
notification interrupt, optional flash operation abort, and optional abort notification interrupt.
flash access.
On-chip flash memory with ECC
On-chip SRAM with ECC
Platform flash memory controller
MPC5643L Microcontroller Data Sheet, Rev. 8.1
Introduction
9

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