MPC8313E-RDB Freescale Semiconductor, MPC8313E-RDB Datasheet - Page 15

• Manufacturer Part Number: MPC8313E-RDB
• Description: BOARD PROCESSOR
• Manufacturer: Freescale Semiconductor
• Series: PowerQUICC II™ PROr
• Type: MCUr

Specifications of MPC8313E-RDB

• Contents: Reference Design Board, Software and Documentation
• Termination Type: SMD
• Supply Voltage Max: 1.05V
• Tool / Board Applications: Wired Connectivity-LIN, CAN, Ethernet, USB
• Mcu Supported Families: POWERQUICC II PRO
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Silicon Manufacturer: Freescale
• Silicon Core Number: MPC83xx
• Kit Application Type: Communication & Networking
• Application Sub Type: Ethernet
• Core Architecture: Power Architecture
• Silicon Family Name: PowerQUICC II PRO
• For Use With/related Products: MPC8313E
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 13
Table 14
GV
Table 15
Freescale Semiconductor
Input/output capacitance: DQ, DQS, DQS
Delta input/output capacitance: DQ, DQS, DQS
Note:
1. This parameter is sampled. GV
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Input/output capacitance: DQ, DQS
Delta input/output capacitance: DQ, DQS
Note:
1. This parameter is sampled. GV
noise on MV
equal to MV
DD
TT
DD
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
(typ) = 2.5 V
is expected to be within 50 mV of the DRAM GV
is expected to be equal to 0.5 × GV
provides the DDR2 capacitance when
provides the recommended operating conditions for the DDR SDRAM component(s) when
provides the DDR capacitance when
Parameter/Condition
Parameter/Condition
REF
REF
Parameter/Condition
. This rail should track variations in the DC level of MV
Table 14. DDR SDRAM DC Electrical Characteristics for GV
may not exceed ±2% of the DC value.
OUT
OUT
MPC8313E PowerQUICC
.
= 0.35 V)
= 1.95 V)
Table 13. DDR2 SDRAM Capacitance for GV
Table 15. DDR SDRAM Capacitance for GV
DD
DD
= 1.8 V ± 0.090 V, f = 1 MHz, T
= 2.5 V ± 0.125 V, f = 1 MHz, T
DD
, and to track GV
™
II Pro Processor Hardware Specifications, Rev. 3
Symbol
MV
GV
V
V
I
V
I
I
Symbol
OH
GV
OZ
OL
TT
REF
IH
IL
DD
C
GV
DD
C
DIO
DD
IO
Symbol
at all times.
DD
≤
C
C
(typ) = 2.5 V.
V
DIO
(typ) =
IO
OUT
DD
MV
MV
A
0.49 × GV
DC variations as measured at the receiver. Peak-to-peak
A
≤
= 25°C, V
= 25°C, V
GV
REF
1.8 V.
REF
–16.2
–0.3
–9.9
16.2
REF
Min
2.3
DD
– 0.04
+ 0.15
Min
.
—
.
6
Min
DD
—
OUT
6
DD
OUT
DD
(typ) = 2.5 V
(typ) = 1.8 V
= GV
= GV
MV
MV
0.51 × GV
GV
DD
DD
DD
REF
REF
/2, V
DD
(typ) = 2.5 V
/2, V
Max
–9.9
2.7
Max
—
—
0.5
Max
0.5
8
+ 0.04
+ 0.3
– 0.15
8
OUT
OUT
DD
(peak-to-peak) = 0.2 V.
(peak-to-peak) = 0.2 V.
DDR and DDR2 SDRAM
Unit
Unit
Unit
mA
mA
μA
pF
pF
pF
pF
V
V
V
V
V
Notes
Notes
Notes
—
—
—
—
1
1
2
1
1
1
3
4
15