lh28f008sc Sharp Microelectronics of the Americas, lh28f008sc Datasheet - Page 2

• Manufacturer Part Number: lh28f008sc
• Description: 8m 1m ? 8 Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

LH28F008SC
INTRODUCTION
SmartVoltage technology is a high-density, low-cost, non-
volatile, read/write storage solution for a wide range of
applications. Its symmetrically-blocked architecture, flex-
ible voltage and extended cycling provide for highly flex-
ible component suitable for resident flash arrays, SIMMs
and memory cards. Its enhanced suspend capabilities pro-
vide for an ideal solution for code and data storage appli-
cations. For secure code storage applications, such as
networking, where code is either directly executed out of
flash or downloaded to DRAM, the LH28F008SC offers
three levels of protection: absolute protection with V
GND, selective hardware block locking, or flexible software
block locking. These alternatives give designers ultimate
control of their code security needs.
0.4 µm ETOX™ V process technology. It comes in in-
dustry-standard packages: the 40-pin TSOP , ideal for
board constrained applications, and the rugged 44-pin
SOP. Based on the 28F008SA architecture, the
LH28F008SC enables quick and easy upgrades for
designs demanding the state-of-the art.
2
44-PIN SOP
SHARP’S LH28F008SC FlashFile™ memory with
The LH28F008SC is manufactured on SHARP’s
GND
GND
DQ
DQ
DQ
DQ
V
A
A
NC
NC
RP
A
A
A
A
A
A
A
A
A
PP
A
11
10
Figure 3. SOP 44-Pin Configuration
4
9
8
7
6
5
2
1
0
0
1
2
3
3
10
12
13
14
15
16
17
18
19
20
21
22
11
2
3
4
5
6
7
8
9
1
44
43
42
41
40
39
38
37
36
35
34
33
32
30
29
28
27
26
25
24
23
31
TOP VIEW
V
V
CE
A
A
A
A
A
A
A
A
NC
NC
NC
NC
WE
OE
RY/BY
DQ
DQ
DQ
DQ
CC
CC
12
13
14
15
16
17
18
19
28F008SC-2
7
6
4
5
PP
at
maintains backwards-compatiblity with SHARP’S
28F008SA. Key enhancements over the 28F008SA
include:
•
•
•
ister, and software command set. These similarities
enable a clean upgrade from the 28F008SA to
LH28F008SC. When upgrading, it is important to note
the following differences:
• Because of new feature support, the two devices
• V
• To take advantage of SmartVoltage technology,
DESCRIPTION
Voltage FlashFile memory organized as 1M of 8 bits. The
1M of data is arranged in sixteen 64K blocks which are
individually erasable, lockable, and unlockable in-system.
The memory map is shown in Figure 5.
and V
nations Table, to meet system performance and power
expectations. 3.3 V V
fourth the power of 5 V V
highest read performance. V
nates the need for a separate 12 V converter, while
V
formance. In addition to flexible erase and program volt-
ages, the dedicated V
protection when V
V
Offered by SmartVoltage Technology
New Features
PP
CC
The LH28F008SC SmartVoltage FlashFile memory
SmartVoltage Technology
Enhanced Suspend Capabilities
In-System Block Locking
Both devices share a compatible pinout, status reg-
have different device codes. This allows for soft-
ware optimization.
support 3.3 V and 5 V block erase, byte write, and
lock-bit configuration operations. Designs that
switch V
sure that the V
allow V
The LH28F008SC is a high-performance 8M Smart-
SmartVoltage technology provides a choice of V
PPLK
= 12 V maximizes block erase and byte write per-
and V
PP
V
CC
combinations, as shown in the Voltage Combi-
has been lowered from 6.5 V to 1.5 V to
PP
PP
VOLTAGE
3.3 V
5 V
PP
connection to 3.3 V or 5 V.
off during read operations should make
Voltage Combinations
PP
PP
voltage transitions to GND.
CC
V
consumes approximately one-
PPLK
PP
CC
8M (1M × 8) Flash Memory
. But, 5 V V
pin gives complete data
PP
.
at 3.3 V and 5 V elimi-
3.3 V, 5 V, 12 V
V
PP
5 V, 12 V
VOLTAGE
CC
provides the
CC