lh28f008sc Sharp Microelectronics of the Americas, lh28f008sc Datasheet - Page 7

• Manufacturer Part Number: lh28f008sc
• Description: 8m 1m ? 8 Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

8M (1M × 8) Flash Memory
Figure 5. Device Identifier Code Memory Map
FFFFF
1FFFF
0FFFF
F0004
F0003
F0002
F0001
F0000
10004
10003
10002
10001
10000
00004
00003
00002
00001
00000
BLOCK 15 LOCK CONFIGURATION CODE
BLOCK 1 LOCK CONFIGURATION CODE
MASTER LOCK CONFIGURATION CODE
BLOCK 0 LOCK CONFIGURATION CODE
FUTURE IMPLEMENTATION
FUTURE IMPLEMENTATION
FUTURE IMPLEMENTATION
FUTURE IMPLEMENTATION
FUTURE IMPLEMENTATION
(BLOCKS 2 THROUGH 14)
MANUFACTURER CODE
RESERVED FOR
RESERVED FOR
RESERVED FOR
RESERVED FOR
RESERVED FOR
DEVICE CODE
BLOCK 15
BLOCK 1
BLOCK 0
28F008SC-5
Write
device data and identifier codes. They also control
inspection and clearing of the status register. When
V
sure, byte write, and lock-bit configuration.
mand data and an address within the block to be erased.
The Byte Write command requires the command and
address of the location to be written. Set Master and
Block Lock-Bit commands require the command and
address within the device (Master Lock) or block within
the device (Block Lock) to be locked. The Clear Block
Lock-Bits command requires the command and address
within the device.
location. It is written when WE
address and data needed to execute a command are
latched on the rising edge of WE
goes high first). Standard microprocessor write timings
are used. Figures 16 and 17 illustrate WE
trolled write operations.
COMMAND DEFINITIONS
from the status register, identifier codes, or blocks are
enabled. Placing V
block erase, byte write and lock-bit configuration
operations.
commands into the CUI. The Command Definitions Table
defines these commands.
Read Array Command
power-down mode, the device defaults to read array
mode. This operation is also initiated by writing the Read
Array command. The device remains enabled for reads
until another command is written. Once the internal
WSM has started a block erase, byte write or lock-bit
configuration, the device will not recognize the Read
Array command until the WSM completes its operation
unless the WSM is suspended via an Erase Suspend
or Byte Write Suspend command. The Read Array com-
mand functions independently of the V
RP
PP
Writing commands to the CUI enable reading of
The Block Erase command requires appropriate com-
The CUI does not occupy an addressable memory
When the V
Device operations are selected by writing specific
Upon initial device power-up and after exit from deep
»
can be V
= V
PPH1/2/3
IH
or V
, the CUI additionally controls block era-
PP
voltage
PPH1/2/3
HH
.
on V
V
»
PPLK
and CE
PP
»
enables successful
, Read operations
or CE
»
PP
are active. The
LH28F008SC
»
and CE
»
voltage and
(whichever
»
con-
7