lh28f008sc Sharp Microelectronics of the Americas, lh28f008sc Datasheet - Page 3

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lh28f008sc

Manufacturer Part Number
lh28f008sc
Description
8m 1m ? 8 Flash Memory
Manufacturer
Sharp Microelectronics of the Americas
Datasheet

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8M (1M × 8) Flash Memory
cally configures the device for optimized read and write
operations.
terface between the system processor and internal op-
eration of the device. A valid command sequence written
to the CUI initiates device automation. An Internal Write
State Machine (WSM) automatically executes the algo-
rithms and timings necessary for block erase, byte write,
and lock-bit configuration operations.
64K blocks typically within 1 second (5 V V
independent of other blocks. Each block can be inde-
pendently erased 100,000 times (1.6 million block erases
per device). Block erase suspend mode allows system
software to suspend block erase to read or write data
from any other block.
A
Internal V
A Command User Interface (CUI) serves as the in-
A block erase operation erases one of the device’s
0
- A
19
COUNTER
CC
ADDRESS
ADDRESS
BUFFER
LATCH
INPUT
and V
PP
detection Circuitry automati-
Y-DECODER
X-DECODER
Figure 4. LH28F008SC Block Diagram
MULTIPLEXER
OUTPUT
BUFFER
OUTPUT
CC
, 12 V V
16 64KB BLOCKS
PP
COMPARATOR
DQ
)
IDENTIFIER
REGISTER
Y-GATING
REGISTER
STATUS
0
DATA
- DQ
typically within 6 µs (5 V V
pend mode enables the system to read data or execute
code from any other flash memory array location.
sixteen block lock-bits and a master lock-bit, to lock and
unlock blocks. Block lock-bits gate block erase and byte
write operations, while the master lock-bit gates block
lock-bit modification. Lock-bit configuration operations
(Set Block, Lock-Bit, Set Master Lock-Bit, and Clear
Block Lock-Bits commands) set and cleared lock-bits.
erase, byte write, or lock-bit configuration operation is
finished.
7
Writing memory data is performed in byte increments
Individual block locking uses a combination of bits,
The status register indicates when the WSM’s block
REGISTER
BUFFER
INPUT
DATA
WRITE STATE
COMMAND
REGISTER
MACHINE
CC
, 12 V V
PROGRAM/
VOLTAGE
SWITCH
ERASE
PP
I/O LOGIC
). Byte write sus-
LH28F008SC
RY/BY
CE
WE
OE
RP
V
V
GND
28F008SC-3
PP
CC
RP
3

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