C8051F365-GM Silicon Laboratories Inc, C8051F365-GM Datasheet - Page 141
![IC 8051 MCU 32K FLASH 28-QFN](/photos/12/27/122713/c8051f365-gm_sml.jpg)
C8051F365-GM
Manufacturer Part Number
C8051F365-GM
Description
IC 8051 MCU 32K FLASH 28-QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F36xr
Specifications of C8051F365-GM
Program Memory Type
FLASH
Program Memory Size
32KB (32K x 8)
Package / Case
28-QFN
Core Processor
8051
Core Size
8-Bit
Speed
100MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
25
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
I2C/SMBus/SPI/UART
Maximum Clock Frequency
100 MHz
Number Of Programmable I/os
25
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F360DK
Minimum Operating Temperature
- 40 C
Package
28QFN
Device Core
8051
Family Name
C8051F36x
Maximum Speed
100 MHz
Operating Supply Voltage
3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1410 - KIT DEV FOR C8051F360 FAMILY
Eeprom Size
-
Data Converters
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1647
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C8051F365-GM
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
- Current page: 141 of 288
- Download datasheet (3Mb)
13.3.2. 16.4.2 PSWE Maintenance
13.3.3. System Clock
7. Reduce the number of places in code where the PSWE bit (b0 in PSCTL) is set to a '1'. There
8. Minimize the number of variable accesses while PSWE is set to a '1'. Handle pointer address
9. Disable interrupts prior to setting PSWE to a '1' and leave them disabled until after PSWE has
10. Make certain that the Flash write and erase pointer variables are not located in XRAM. See
11. Add address bounds checking to the routines that write or erase Flash memory to ensure that
12. If operating from an external crystal, be advised that crystal performance is susceptible to
13. If operating from the external oscillator, switch to the internal oscillator during Flash write or
should be exactly one routine in code that sets PSWE to a '1' to write Flash bytes and one rou-
tine in code that sets both PSWE and PSEE both to a '1' to erase Flash pages.
updates and loop maintenance outside the "PSWE = 1; ... PSWE = 0;" area. Code examples
showing this can be found in AN201, "Writing to Flash from Firmware", available from the Sili-
con Laboratories web site.
been reset to '0'. Any interrupts posted during the Flash write or erase operation will be ser-
viced in priority order after the Flash operation has been completed and interrupts have been
re-enabled by software.
your compiler documentation for instructions regarding how to explicitly locate variables in dif-
ferent memory areas.
a routine called with an illegal address does not result in modification of the Flash.
electrical interference and is sensitive to layout and to changes in temperature. If the system is
operating in an electrically noisy environment, use the internal oscillator or use an external
CMOS clock.
erase operations. The external oscillator can continue to run, and the CPU can switch back to
the external oscillator after the Flash operation has completed.
C8051F360/1/2/3/4/5/6/7/8/9
Rev. 1.0
141
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