DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 288

IC H8S/2378 MCU FLASH 144-QFP

DF2378BVFQ35WV

Manufacturer Part Number
DF2378BVFQ35WV
Description
IC H8S/2378 MCU FLASH 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2378BVFQ35WV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
35MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-QFP
For Use With
EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378BVFQ35WV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
6.7.5
When the DCTL pin is fixed to 1, synchronous clock (SDRAMφ) is output from the CS5 pin.
When the frequency multiplication factor of the PLL circuit of this LSI is set to ×1 or ×2,
SDRAMφ is 90° phase shift from φ. Therefore, a stable margin is ensured for the synchronous
DRAM that operates at the rising edge of clocks. Figure 6.43 shows the relationship between φ
and SDRAMφ. When the frequency multiplication factor of the PLL circuit is ×4, the phase of
SDRAMφ and that of φ are the same.
When the CLK pin of the synchronous DRAM is directly connected to SDRAMφ of this LSI, it is
recommended to set the frequency multiplication factor of the PLL circuit to ×1 or ×2.
Note: SDRAMφ output timing is shown when the frequency multiplication factor of the PLL
6.7.6
The four states of the basic timing consist of one T
output cycle) state, and the T
When areas 2 to 5 are set for the continuous synchronous DRAM space, settings of the WAITE bit
of BCR, RAST, CAST, RCDM bits of DRAMCR, and the CBRM bit of REFCR are ignored.
Figure 6.44 shows the basic timing for synchronous DRAM.
Rev.7.00 Mar. 18, 2009 page 220 of 1136
REJ09B0109-0700
Figure 6.43 Relationship between φ and SDRAMφ (when PLL Frequency Multiplication
circuit is ×1 or ×2.
Synchronous DRAM Clock
Basic Timing
SDRAMφ
φ
c1
and two T
Factor Is ×1 or ×2)
c2
(column address output cycle) states.
T cyc
p
(precharge cycle) state, one T
1/4 T cyc (90°)
r
(row address

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