DF2378RVFQ34V Renesas Electronics America, DF2378RVFQ34V Datasheet - Page 1102

• Manufacturer Part Number: DF2378RVFQ34V
• Description: IC H8S MCU FLASH 512K 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378RVFQ34V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 34MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 26 Electrical Characteristics
Notes: 1. Follow the program/erase algorithms when making the time settings.
26.1.7
The F-ZTAT and masked ROM versions both satisfy the electrical characteristics shown in this
manual, but actual electrical characteristic values, operating margins, noise margins, and other
properties may vary due to differences in manufacturing process, on-chip ROM, layout patterns,
and so on.
When system evaluation testing is carried out using the F-ZTAT version, the same evaluation
testing should also be conducted for the masked ROM version when changing over to that version.
Rev.7.00 Mar. 18, 2009 page 1034 of 1136
REJ09B0109-0700
2. Programming time per 128 bytes. (Indicates the total time during which the P bit is set
3. Time to erase one block. (Indicates the time during which the E bit is set in FLMCR1.
4. Maximum programming time
5. The maximum number of programming (N) should be set as shown below according to
6. For the maximum erase time (t
7. The minimum number of rewrites after which all characteristics are guaranteed.
8. Reference value for 25°C. (Rewrites usually function up to this standard value.)
9. The data retention characteristics within the specification range, including the minimum
Usage Note
(Additional programming)
Number of programming (n)
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
Does not include the erase-verify time.)
the actual set value of (z) so as not to exceed the maximum programming time
(t
The wait time after P bit setting (z) should be changed as follows according to the
number of programming (n).
Number of programming (n)
wait time after E bit setting (z) and the maximum number of erases (N):
(Characteristics are guaranteed over a range of one rewrite to the minimum number of
rewrites.)
number of rewrites.
P
(max)).
t
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
1 ≤ n ≤ 6
t
P
E
(max) = Wait time after E bit setting (z) × maximum number of erases (N)
(max) = Σ wait time after P bit setting (z)
i=1
N
z = 30 µs
z = 200 µs
z = 10 µs
E
(max)), the following relationship applies between the