DF2378RVFQ34V Renesas Electronics America, DF2378RVFQ34V Datasheet - Page 318

• Manufacturer Part Number: DF2378RVFQ34V
• Description: IC H8S MCU FLASH 512K 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378RVFQ34V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 34MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
Write after Read: If an external write occurs after an external read while the ICIS0 bit is set to 1
in BCR, an idle cycle is inserted at the start of the write cycle.
Figure 6.66 shows an example of the operation in this case. In this example, bus cycle A is a read
cycle for ROM with a long output floating time, and bus cycle B is a CPU write cycle. In (a), an
idle cycle is not inserted, and a collision occurs in bus cycle B between the read data from ROM
and the CPU write data. In (b), an idle cycle is inserted, and a data collision is prevented.
Rev.7.00 Mar. 18, 2009 page 250 of 1136
REJ09B0109-0700
Address bus
CS (area A)
CS (area B)
Data bus
HWR
RD
Figure 6.66 Example of Idle Cycle Operation (Write after Read)
φ
(a) No idle cycle insertion
T
1
(ICIS0 = 0)
Bus cycle A
Long output floating time
T
2
T
3
Bus cycle B
T
1
T
2
Data collision
Address bus
CS (area A)
CS (area B)
Data bus
HWR
RD
φ
T
(b) Idle cycle insertion
1
Bus cycle A
(ICIS0 = 1, initial value)
T
2
T
3
Idle cycle
T
i
Bus cycle B
T
1
T
2