DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 417

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

Bit
4
Bit Name
FLER
Initial
Value
0
R/W
R
Description
Flash Memory Error
Indicates an error occurs during programming and
erasing flash memory. When FLER is set to 1, flash
memory enters the error protection state.
When FLER is set to 1, high voltage is applied to the
internal flash memory. To reduce the damage to flash
memory, the reset must be released after the reset
period of 100 µs which is longer than normal.
0: Flash memory operates normally.
[Clearing condition]
•
1: An error occurs during programming/erasing flash
[Setting conditions]
•
•
•
•
Programming/erasing protection for flash memory
(error protection) is invalid.
memory.
Programming/erasing protection for flash memory
(error protection) is valid.
At a reset or in hardware standby mode
When an interrupt, such as NMI, occurs during
programming/erasing flash memory.
When the flash memory is read during
programming/erasing flash memory (including a
vector read or an instruction fetch).
When the SLEEP instruction is executed during
programming/erasing flash memory (including
software-standby mode)
When a bus master other than the CPU, such as the
DMAC, gets bus mastership during
programming/erasing flash memory.
Rev. 2.00, 03/04, page 383 of 534