DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 555
DF2170VTE33
Manufacturer Part Number
DF2170VTE33
Description
MCU 3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet
1.DF2170BVTE33V.pdf
(572 pages)
Specifications of DF2170VTE33
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2170VTE33
HD64F2170VTE33
HD64F2170VTE33
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2170VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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18.4
18.4.1
Table 18.11 Flash Memory Characteristics
Conditions: V
Notes: 1. The programming and erase time depends on the data.
Item
Programming time*
Erase time*
Rewrite times (total)*
Erase time (total)*
Programming and erase time
(total)*
Count of rewriting
Data hold time*
1,
2. The programming and erase time does not include the data transfer time.
3. The minimum times that all characteristics after rewriting are guaranteed. (A range
4. Data hold characteristics when rewriting is performed within the range of specifications
*
2,
Flash Memory Characteristics
Flash Memory Characteristics
*
4
between 1 and minimum value is guaranteed.)
including minimum value.
1,
*
2,
CC
*
4
4
= 3.0 V to 3.6 V, V
1,
*
1,
2,
*
1,
*
2,
*
4
*
2,
4
*
4
Symbol
t
t
Σ
Σ
Σ
N
t
P
E
DRP
tP
tE
tPE
WEC
SS
= 0 V
Min.
100*
10
3
Typ.
3
80
500
1000 10000
5
5
10
Max.
30
800
5000
15
15
30
Unit
ms/128 bytes
ms/4 kbytes
ms/32 kbytes
ms/64 kbytes
s/256 kbytes
s/256 kbytes
s/256 kbytes
Times
Year
Rev. 2.00, 03/04, page 521 of 534
Test
Conditions
Ta = 25°C
Ta = 25°C
Ta = 25°C
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