DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 432

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

Erasure Execution: When flash memory is erased, the erase-block number on the user MAT
must be passed to the erasing program which is downloaded. This is set to the FEBS parameter
(general register ER0).
One block is specified from the block number 0 to 11.
For details on the erasing processing procedure, see section 14.4.2, User Program Mode.
a Flash erase block select parameter (FEBS: general register ER0 of CPU)
This parameter specifies the erase-block number. The several block numbers cannot be specified.
Rev. 2.00, 03/04, page 398 of 534
Bit
1
0
Bit Name
WA
SF
Initial
Value


R/W
R/W
R/W
Description
Write Address Error Detect
When the following items are specified as the start
address of the programming destination, an error
occurs.
•
•
0: Setting of programming destination address is normal
1: Setting of programming destination address is
Success/Fail
Indicates whether the program processing is ended
normally or not.
0: Programming is ended normally (no error)
1: Programming is ended abnormally (error occurs)
abnormal
When the programming destination address in the
area other than flash memory is specified
When the specified address is not in a 128-byte
boundary. (The lower eight bits of the address are
other than H'00 and H'80.)