MT48LC16M16LFFG Micron Technology Inc, MT48LC16M16LFFG Datasheet - Page 36

• Manufacturer Part Number: MT48LC16M16LFFG
• Manufacturer: Micron Technology Inc

Specifications of MT48LC16M16LFFG

• Lead Free Status / Rohs Status: Not Compliant

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - H version
(Notes: 1, 5, 6; notes appear on page 40; V
CAPACITANCE – TSOP
(Note: 2; notes appear on page 40)
256Mb: x16 Mobile SDRAM
MobileRamY26L_B.p65 – Pub. 04/03
CAPACITANCE – FBGA
(Note: 2; notes appear on page 40)
SUPPLY VOLTAGE
I/O SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
DATA OUTPUT HIGH VOLTAGE: Logic 1; All inputs
DATA OUTPUT LOW VOLTAGE: LOGIC 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V ≤ V
PARAMETER
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
PARAMETER
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
PARAMETER/CONDITION
IN
≤ V
DD
(All other pins not under test = 0V)
DD
= 1.8 ±0.15V, V
OUT
36
≤ V
DDQ
DD
Q
= +1.8V ±0.15V )
SYMBOL
SYMBOL
SYMBOL
V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
V
I
DDQ
OZ
I
OH
OL
IH
DD
IL
I
C
C
C
C
C
C
IO
I
I
IO
I
I
1
2
1
2
0.8*V
V
DD
MIN
1.65
1.65
-0.3
-5
-5
–
MIN
Q -0.2
MIN
2.5
2.5
4.0
1.5
1.5
3.0
DD
Q V
MOBILE SDRAM
DD
©2003 Micron Technology, Inc. All rights reserved.
MAX
M A X
M A X
1.95
1.95
Q + 0.3
0.3
0.2
4.0
4.0
6.0
4.0
4.0
6.0
256Mb: x16
–
5
5
PRELIMINARY
UNITS NOTES
UNITS NOTES
UNITS NOTES
µA
µA
p F
p F
p F
p F
p F
p F
V
V
V
V
V
V
22
22
29
30
31
29
30
31