MT48LC16M16LFFG Micron Technology Inc, MT48LC16M16LFFG Datasheet - Page 57

• Manufacturer Part Number: MT48LC16M16LFFG
• Manufacturer: Micron Technology Inc

Specifications of MT48LC16M16LFFG

• Lead Free Status / Rohs Status: Not Compliant

A0-A9, A11, A12
NOTE: 1. For this example, the burst length = 4.
256Mb: x16 Mobile SDRAM
MobileRamY26L_B.p65 – Pub. 04/03
TIMING PARAMETERS
*CAS latency indicated in parentheses.
DQML, DQMU
SYMBOL*
t
t
t
t
t
t
t
t
t
t
AH
AS
CH
CL
CK (3)
CK (2)
CK (1)
CKH
CKS
CMH
COMMAND
BA0, BA1
DQM/
2. Requires one clock plus time (5ns or 7ns) with auto precharge or 14ns to 15ns with PRECHARGE.
3. x16: A9, A11 and A12 = “Don’t Care”
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK 0
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
t CK
MIN
T1
NOP
2.5
2.5
10
20
1
3
3
8
1
1
-8
ENABLE AUTO PRECHARGE
MAX
ALTERNATING BANK WRITE ACCESSES
t CMS
t CL
t DS
COLUMN m 3
BANK 0
WRITE
T2
D
IN
t CMH
t CH
t DH
m
MIN
2.5
2.5
10
12
25
1
3
3
1
1
-10
t DS
MAX
D
IN
T3
NOP
m + 1
t DH
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t DS
D
ACTIVE
BANK 1
IN
T4
ROW
ROW
m + 2
57
t DH
t RCD - BANK 1
SYMBOL*
t
t
t
t
t
t
t
t
t
t DS
RP
CMS
DH
DS
RAS
RC
RCD
RRD
WR
D
IN
T5
NOP
m + 3
t DH
t WR - BANK 0
ENABLE AUTO PRECHARGE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
COLUMN b 3
t DS
BANK 1
WRITE
T6
D
IN
t DH
b
1
t DS
1 CLK +
D
NOP
MIN
IN
T7
7ns
2.5
2.5
48
80
20
20
20
1
b + 1
MOBILE SDRAM
t DH
-8
120,000
©2003 Micron Technology, Inc. All rights reserved.
MAX
t DS
t RP - BANK 0
256Mb: x16
D
IN
NOP
T8
b + 2
t DH
1 CLK +
PRELIMINARY
MIN
100
5ns
2.5
2.5
50
20
20
20
1
-10
t DS
120,000
MAX
D
BANK 0
ACTIVE
T9
ROW
IN
ROW
b + 3
t
t
RCD - BANK 0
WR - BANK 1
DON’T CARE
t DH
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
–