TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 14
TC58NVG1S3ETA00
Manufacturer Part Number
TC58NVG1S3ETA00
Description
Manufacturer
Toshiba
Datasheet
1.TC58NVG1S3ETA00.pdf
(65 pages)
Specifications of TC58NVG1S3ETA00
Cell Type
NAND
Density
2Gb
Access Time (max)
30us
Interface Type
Serial
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC58NVG1S3ETA00
Manufacturer:
MICROCHIP
Quantity:
1 000
Company:
Part Number:
TC58NVG1S3ETA00
Manufacturer:
Toshiba
Quantity:
6 983
Column Address Change in Read Cycle Timing Diagram (2/2)
RY
/
CLE
ALE
WE
BY
CE
RE
I/O
1
D
A + N
OUT
Continues from
t
RHW
t
t
CS
CLS
t
DS
05h
t
t
t
CLH
CH
DH
t
ALH
1
of last page
t
ALS
t
DS
Column address
CA0
to 7
t
WC
t
DH
B
t
DS
to 11
CA8
t
t
DH
ALH
14
t
t
CS
t
ALS
CLS
t
DS
E0h
t
t
CLH
t
t
DH
CH
WHR
t
IR
Column address
t
CLR
tCEA
t
t
D
RC
REA
B
OUT
B
Page address
D
B + 1
TC58NVG1S3ETA00
OUT
P
B + N’
D
OUT
2010-05-21C