TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 3

• Manufacturer Part Number: TC58NVG1S3ETA00
• Manufacturer: Toshiba

Specifications of TC58NVG1S3ETA00

• Cell Type: NAND
• Density: 2Gb
• Access Time (max): 30us
• Interface Type: Serial
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
RY
V
V
V
P
T
T
T
C
C
*
SOLDER
STG
OPR
CC
IN
I/O
D
IN
OUT
SYMBOL
CLE
SYMB0L
I/O1
I/O8
ALE
/
WE
WP
to
RE
This parameter is periodically sampled and is not tested for every device.
CE
BY
Power Supply Voltage
Input Voltage
Input /Output Voltage
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
Input
Output
*(Ta = 25°C, f = 1 MHz)
Control circuit
Logic control
RY
I/O
/
BY
PARAMETER
RATING
Command register
Address register
Status register
Control circuit
3
HV generator
CONDITION
V
V
IN
OUT
= 0 V
= 0 V
− 0.6 to V
− 55 to 150
CC
− 0.6 to 4.6
− 0.6 to 4.6
VALUE
0 to 70
+ 0.3 ( ≤ 4.6 V)
MIN
260
0.3
⎯
⎯
TC58NVG1S3ETA00
Memory cell array
Column decoder
Column buffer
Data register
MAX
Sense amp
10
10
2010-05-21C
V
CC
V
SS
UNIT
UNIT
pF
pF
°C
°C
°C
W
V
V
V