TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 23

• Manufacturer Part Number: TC58NVG1S3ETA00
• Manufacturer: Toshiba

Specifications of TC58NVG1S3ETA00

• Cell Type: NAND
• Density: 2Gb
• Access Time (max): 30us
• Interface Type: Serial
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

(Note)
RY
Multi-Page Program Operation with Data Cache Timing Diagram (4/4)
CLE
ALE
/
WE
RE
CE
BY
I/O
Continued from 3 of last page
Make sure to terminate the operation with 80h-10h- command sequence.
If the operation is terminated by 81h-15h command sequence, monitor I/O 6 (Ready / Busy) by issuing Status
Read command (70h) and make sure the previous page program operation is completed. If the page program
operation is completed issue FFh reset before next operation.
t
CS
t
CLS
3
t
DS
81h
t
t
t
CLH
ALH
DH
t
CH
t
ALS
t
CLS
t
CS
t
( * 1) t
program, the t
t
A = (command input cycle + address input cycle + data input cycle time of the last page)
If “A” exceeds the t
DS
PROG
CA0
to 7
t
DH
PROG
= t
to 11
CA8
PROG
: Since the last page programming by 10h command is initiated after the previous cache
Page Address M+n
PROG
of the last page + t
PA0
to 7
District-1
PROG
: Do not input data while data is being output.
: V
during cache programming is given by the following equation.
IH
or V
to 15
PA8
of previous page, t
IL
PA16
t
PROG
ALH
23
t
ALS
of the previous page − A
t
DS
D
PROG
IN
t
N
DH
of the last page is t
N+1
D
IN
D
IN
TC58NVG1S3ETA00
2111
PROG
10h
max.
t
WB
t
PROG (*1)
2010-05-21C
t
DS
71h
t
DH
Status