TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 19

• Manufacturer Part Number: TC58NVG1S3ETA00
• Manufacturer: Toshiba

Specifications of TC58NVG1S3ETA00

• Cell Type: NAND
• Density: 2Gb
• Access Time (max): 30us
• Interface Type: Serial
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

RY
CLE
ALE
/
WE
CE
RE
I/O
BY
Auto-Program Operation with Data Cache Timing Diagram (3/3)
Continued from 2 of last page
t
CS
t
CLS
2
(Note) Make sure to terminate the operation with 80h-10h- command sequence.
t
DS
80h
t
t
t
CLH
ALH
DH
t
CH
t
If the operation is terminated by 80h-15h command sequence, monitor I/O 6 (Ready / Busy) by
issuing Status Read command (70h) and make sure the previous page program operation is
completed. If the page program operation is completed issue FFh reset before next operation.
t
ALS
t
CS
CLS
t
DS
CA0
to 7
t
DH
to 11
CA8
PA0
to 7
( * 1) t
program, the t
t
A = (command input cycle + address input cycle + data input cycle time of the last page)
If “A” exceeds the t
: Do not input data while data is being output.
: V
PROG
IH
PROG
to 15
or V
PA8
= t
PROG
IL
: Since the last page programming by 10h command is initiated after the previous cache
PA16
PROG
t
ALH
of the last page + t
PROG
19
t
ALS
during cache programming is given by the following equation.
t
DS
D
of previous page, t
IN
t
N
DH
N+1
D
PROG
IN
of the previous page − A
PROG
D
IN
2111
of the last page is t
TC58NVG1S3ETA00
10h
t
WB
t
PROG (*1)
PROG
2010-05-21C
t
DS
max.
70h
t
DH
Status