TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 28

• Manufacturer Part Number: TC58NVG1S3ETA00
• Manufacturer: Toshiba

Specifications of TC58NVG1S3ETA00

• Cell Type: NAND
• Density: 2Gb
• Access Time (max): 30us
• Interface Type: Serial
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

2048 blocks
131072
pages
Schematic Cell Layout and Address Assignment
Table 1. Addressing
First cycle
Second cycle
Third cycle
Fourth cycle
Fifth cycle
Data Cache
Page Buffer
The Program operation works on page units while the Erase operation works on block units.
2048
2048
2112
PA15
CA7
I/O8
PA7
L
L
PA14
64
64
I/O7
CA6
PA6
L
L
PA13
I/O6
CA5
PA5
8I/O
L
L
I/O8
64 Pages = 1 block
PA12
CA4
I/O5
PA4
L
L
I/O1
CA11 CA10
PA11
CA3
I/O4
PA3
L
28
A page consists of 2112 bytes in which 2048 bytes are
used for main memory storage and 64 bytes are for
redundancy or for other uses.
consecutive clock cycles, as shown in Table 1.
PA10
I/O3
CA2
PA2
An address is read in via the I/O port over five
L
1 page = 2112 bytes
1 block = 2112 bytes × 64 pages = (128K + 4K) bytes
Capacity = 2112 bytes × 64pages × 2048 blocks
CA1
CA9
PA1
PA9
I/O2
L
PA16
CA0
CA8
I/O1
PA0
PA8
CA0 to CA11: Column address
PA0 to PA16: Page address
PA6 to PA16: Block address
PA0 to PA5: NAND address in block
TC58NVG1S3ETA00
2010-05-21C