ATmega8 Atmel Corporation, ATmega8 Datasheet - Page 221

no-image

ATmega8

Manufacturer Part Number
ATmega8
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATmega8

Flash (kbytes)
8 Kbytes
Pin Count
32
Max. Operating Frequency
16 MHz
Cpu
8-bit AVR
# Of Touch Channels
12
Hardware Qtouch Acquisition
No
Max I/o Pins
23
Ext Interrupts
2
Usb Speed
No
Usb Interface
No
Spi
1
Twi (i2c)
1
Uart
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
1
Eeprom (bytes)
512
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
2.7 to 5.5
Operating Voltage (vcc)
2.7 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
3
Input Capture Channels
1
Pwm Channels
3
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATmega8-16AC
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
ATmega8-16AI
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
ATmega8-16AI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
ATmega8-16AJ
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
ATmega8-16AL
Manufacturer:
ALTERA
0
Part Number:
ATmega8-16AU
Manufacturer:
Atmel
Quantity:
20 000
Part Number:
ATmega8-16AU
Manufacturer:
ATMEL
Quantity:
5
Part Number:
ATmega8-16AU
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
ATmega8-16AU
Manufacturer:
ATMEL
Quantity:
20 000
Company:
Part Number:
ATmega8-16AU
Quantity:
4
Part Number:
ATmega8-16AUR
Manufacturer:
AVX
Quantity:
4 000
Part Number:
ATmega8-16AUЈ¬ SL383
Manufacturer:
ATMEL
Quantity:
6 000
Part Number:
ATmega8-16PU
Manufacturer:
ATMEL
Quantity:
5 510
Part Number:
ATmega8515
Manufacturer:
AT
Quantity:
20 000
Parallel
Programming
Enter Programming
Mode
Considerations for
Efficient Programming
Chip Erase
2486Z–AVR–02/11
The following algorithm puts the device in Parallel Programming mode:
1. Apply 4.5V - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least 6 times
3. Set the Prog_enable pins listed in
4. Apply 11.5V - 12.5V to RESET. Any activity on Prog_enable pins within 100ns after +12V
Note, if the RESET pin is disabled by programming the RSTDISBL Fuse, it may not be possible
to follow the proposed algorithm above. The same may apply when External Crystal or External
RC configuration is selected because it is not possible to apply qualified XTAL1 pulses. In such
cases, the following algorithm should be followed:
1. Set Prog_enable pins listed in
2. Apply 4.5V - 5.5V between V
3. Wait 100ns
4. Re-program the fuses to ensure that External Clock is selected as clock source
5. Exit Programming mode by power the device down or by bringing RESET pin to 0’b0
6. Entering Programming mode with the original algorithm, as described above
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
not reset until the Program memory has been completely erased. The Fuse Bits are not
changed. A Chip Erase must be performed before the Flash and/or the EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading
2. Set BS1 to “0”
3. Set DATA to “1000 0000”. This is the command for Chip Erase
4. Give XTAL1 a positive pulse. This loads the command
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low
6. Wait until RDY/BSY goes high before loading a new command
100ns
has been applied to RESET, will cause the device to fail entering Programming mode
RESET
(CKSEL3:0 = 0’b0000) and RESET pin is activated (RSTDISBL unprogrammed). If Lock
Bits are programmed, a chip erase command must be executed before changing the
fuses
The command needs only be loaded once when writing or reading multiple memory
locations
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase
Address High byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading
1. The EEPRPOM memory is preserved during chip erase if the EESAVE Fuse is programmed
CC
CC
Table 92 on page 220
and GND, and wait at least 100µs
and GND simultaneously as 11.5V - 12.5V is applied to
Table 92 on page 220
(1)
memories plus Lock Bits. The Lock Bits are
to “0000”
to “0000” and wait at least
ATmega8(L)
221

Related parts for ATmega8