ST72344S4 STMicroelectronics, ST72344S4 Datasheet - Page 225

• Manufacturer Part Number: ST72344S4
• Description: 8-bit MCU
• Manufacturer: STMicroelectronics

Specifications of ST72344S4

• Up To 16 Kbytes Program Memory: single voltage extended Flash (XFlash) with readout and write protection, in-circuit and inapplication programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention
• 256 Bytes Data Eeprom With Readout Protection. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55 °C.
• Clock Sources: crystal/ceramic resonator oscillators, high-accuracy internal RC oscillator or external clock
• 5 Power-saving Modes: Slow, Wait, Halt, Auto-wakeup from Halt and Active-halt
• 16-bit Timer A With: 1 input capture, 1 output compares, external clock input, PWM and pulse generator modes
• 16-bit Timer B With: 2 input captures, 2 output compares, PWM and pulse generator modes

ST72344xx ST72345xx
13.12
10-bit ADC characteristics
T
Table 112. ADC accuracy
1. Data based on characterization results over the whole temperature range.
2. ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins may
3. Data based on characterization results, monitored in production to guarantee 99.73% within ± max value
Figure 117. ADC accuracy characteristics
1023
1022
1021
A
Symbol
= -40 °C to 85 °C, unless otherwise specified
|E
|E
|E
reduce the accuracy of the conversion being performed on another analog input.
The effect of negative injection current on robust pins is specified in
Any positive injection current within the limits specified for I
affect the ADC accuracy.
from -40 °C to +125 °C (± 3
7
6
5
4
3
2
1
|E
0
O
G
D
V
T
|
SS
|
|
|
Digital Result ADCDR
1LSB
1
E
Total unadjusted error
Offset error
Gain Error
Differential linearity error
O
2
IDEAL
3
=
V
------------------------------- -
4
DD
Parameter
1024
–
5
1 LSB
V
σ
SS
distribution limits).
E
6
T
IDEAL
Doc ID 12321 Rev 5
E
7
L
(2)
E
D
1021 1022 1023 1024
(3)
f
f
R
V
CPU
ADC
DD
AIN
(1)
Conditions
= 2.7 V to 5.5 V
= 8 MHz,
= 4 MHz
< 10κΩ,
E
INJ(PIN)
G
V
DD
and
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
between the actual and the ideal transfer curves.
E
transition and the first ideal one.
E
transition and the last actual one.
E
between actual steps and the ideal one.
E
between any actual transition and the end point
correlation line.
T
O
G
D
L
Section 13.10 on page 222
(1)(2)
=Total Unadjusted Error: maximum deviation
=Integral Linearity Error: maximum deviation
=Offset Error: deviation between the first actual
=Gain Error: deviation between the last ideal
=Differential Linearity Error: maximum deviation
Σ
V
I
in
INJ(PIN)
(LSB
Electrical characteristics
IDEAL
in
Typ
-1
-2
4
3
Section 13.9
)
Max
-2
-4
8
6
(3)
does not
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Unit
LSB