XC908AS60ACFU Motorola Semiconductor Products, XC908AS60ACFU Datasheet - Page 79

• Manufacturer Part Number: XC908AS60ACFU
• Description: MC68HC908AZ60A, MC68HC908AS60A Hcmos Microcontroller Unit Technical Data
• Manufacturer: Motorola Semiconductor Products

5.4 FLASH-2 Control and Block Protect Registers
5.4.1 FLASH-2 Control Register
MC68HC908AZ60A — Rev 2.0
MOTOROLA
Address:
The FLASH-2 array has two registers that control its operation, the
FLASH-2 Control Register (FL2CR) and the FLASH-2 Block Protect
Register (FL2BPR).
The FLASH-2 Control Register (FL2CR) controls FLASH-2 program and
erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
Reset:
Read:
Write:
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
Setting this read/write bit configures the FLASH-2 array for mass or
page erase operation.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
$FE08
Bit 7
0
0
Figure 5-1. FLASH-2 Control Register (FL2CR)
FLASH-2 Memory
6
0
0
5
0
0
FLASH-2 Control and Block Protect Registers
4
0
0
HVEN
3
0
MASS
2
0
FLASH-2 Memory
ERASE
1
0
Technical Data
PGM
Bit 0
0
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