mc9s08dz32amlfr Freescale Semiconductor, Inc, mc9s08dz32amlfr Datasheet - Page 422

• Manufacturer Part Number: mc9s08dz32amlfr
• Description: Hcs08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

Appendix A Electrical Characteristics
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
P
solving equations 1 and 2 iteratively for any value of T
A.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
422
D
(at equilibrium) for a known T
1
Num
Human Body
Latch-up
Parameter is achieved by design characterization on a small sample size from typical devices under typical
conditions unless otherwise noted.
1
2
3
ESD Protection and Latch-Up Immunity
Model
Human Body Model (HBM)
Charge Device Model (CDM)
Latch-up Current at T
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Table A-5. ESD and Latch-Up Protection Characteristics
Table A-4. ESD and Latch-up Test Conditions
A
Rating
= 125°C
A
MC9S08DZ128 Series Data Sheet, Rev. 1
. Using this value of K, the values of P
1
Description
A
.
Symbol
V
V
I
HBM
CDM
LAT
Symbol
±2000
±500
±100
R1
Min
—
—
—
C
D
and T
J
Value
1500
–2.5
100
can be obtained by
7.5
Max
3
Freescale Semiconductor
–
–
–
Unit
Unit
pF
Ω
mA
V
V
V
V