S29CD-J_12 SPANSION [SPANSION], S29CD-J_12 Datasheet - Page 77

• Manufacturer Part Number: S29CD-J_12
• Manufacturer: SPANSION [SPANSION]

21. Revision History
October 11, 2012 S29CD-J_CL-J_00_B7
Revision A0 (March 1, 2005)
Revision A1 (April 15, 2005)
Ordering Information and Valid
Combinations tables
Revision A2 (January 20, 2006)
Ordering Information
Input/Output Descriptions
Additional Resources
Memory Address Map
Simultaneous Read/Write Operation
Advanced Sector Protection/
Unprotection
Electronic Marking
Absolute Maximum Ratings
AC Characteristics
Asynchronous Read Operation
Conventional Read Operation Timings
Burst Mode Read for 32 Mb and 16 Mb
Burst Mode Read (x32 Mode)
Asynchronous Command Write Timing
Synchronous Command Write/Read
Timing
WP# Timing
Erase/Program Operations
Alternative CE# Controlled Erase/
Program Operations
Appendix 2: Command Definitions
Revision B0 (June 12, 2006)
Global
Distinctive Characteristics
Performance Characteristics
Ordering Information
Section
Initial release.
Updated to include lead Pb-free options.
Added “Contact factory” for 75 MHz. Modified Ordering Options for Characters 15 and 16 to reflect
autoselect ID and top/bottom boot. Changed “N” for Extended Temperature Range to “M”.
Removed Logic Symbol Diagrams.
Added section.
Changed “Bank 2” to “Bank 1”.
Removed Ordering Options Table (Tables 3 and 4).
Added Advanced Sector Protection/Unprotection figure. Added figures for PPB Erase and Program
Algorithm.
Added in Electronic Marking section.
Modified V
32 Mb devices.
Added Note “t
Changed values of t
Moved t
Added t
Removed the following timing parameters:
Added the following timing parameters:
In figure, changed t
Removed t
In figure, changed t
In table, added Note 3: Program/Erase parameters are the same regardless of synchronous or
asynchronous mode. Added t
Removed t
Removed “or when device is in autoselect mode” from Note 14.
Changed document status to Preliminary.
Changed cycling endurance from typical to guaranteed.
Updated Max Asynch. Access Time, Max CE# Access Time, and Max OE# Access time in table.
Updated additional ordering options in designator breakout table. Updated valid combination tables.
• t
• t
• t
• t
• t
• t
• t
• t
• t
• t
• t
• t
DS
DH
AS
AH
CS
CH
ACS
ACH
AAVS
DVCH
INDS
INDH
D a t a
AAVS
DF
(Data Setup to WE# Rising Edge)
(Address Setup to Falling Edge of WE#)
(Address Hold from Falling Edge of WE#)
(CE# Setup Time)
(Data Hold from WE# Rising Edge)
(CE# Hold Time)
(Address Setup Time to CLK)
(Address Hold Time from ADV# Rising Edge of CLK while ADV# is Low)
S29CD-J and S29CL-J Flash Family
CC
WADVH
OES
line to 90% on the high-Z output in figure.
and t
Ratings to reflect 2.6 V and 3.6 V devices. Modified V
OE
from table. Added t
during Read Array”.
S h e e t
and t
AAVH
OEH
CH
AVAV
to t
WCKS
timing parameters to table. Changed t
to t
, t
BUSY
AVQV
WEH
from figure.
OEP
, t
; changed t
ELQV
(OE# High Pulse)
WADVS
, t
GLQV
and t
WPH
Description
in table.
WCKS
to t
OEP
.
CH
to t
CC
CLKH
Ratings to reflect 16 Mb and
. Changed t
CL
to t
CLKL
.
77