PIC18F13K50-E/P MICROCHIP [Microchip Technology], PIC18F13K50-E/P Datasheet - Page 371
![no-image](/images/no-image-200.jpg)
PIC18F13K50-E/P
Manufacturer Part Number
PIC18F13K50-E/P
Description
Manufacturer
MICROCHIP [Microchip Technology]
Datasheet
1.PIC18F13K50-EP.pdf
(414 pages)
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27.4
© 2009 Microchip Technology Inc.
D101*
D101A* C
D130
D131
D132
D133
D134
D135
D135A
Legend:
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external
Param
No.
*
†
2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent
4: Including OSC2 in CLKOUT mode.
DC Characteristics: PIC18F1XK50/PIC18LF1XK50-I/E (Continued)
COSC2 OSC2 pin
E
V
I
I
T
T
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
clock in RC mode.
normal operating conditions. Higher leakage current may be measured at different input voltages.
PPPGM
DDPGM
PEW
RETD
Sym
P
PEW
IO
TBD = To Be Determined
DC CHARACTERISTICS
Capacitive Loading Specs on Output Pins
All I/O pins
Flash Memory
Cell Endurance
V
Voltage on MCLR/V
Erase/Program
V
V
Current on MCLR/V
Erase/Write
Current on V
Erase/Write
Erase/Write cycle time
Characteristic Retention
V
Charging current
Source/sink capability when
charging complete
DD
DD
DD
CAP
for Read
for Bulk Erase
for Write or Row Erase
Capacitor Charging
Characteristic
DD
during
PP
PP
during
during
PIC18F1XK50/PIC18LF1XK50
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
V
DD
100K
V
V
TBD
Min
10K
Preliminary
40
—
—
—
—
—
—
—
MIN
MIN
+ 1.5
Typ†
200
2.1
0.0
—
—
—
—
—
—
—
—
-40°C ≤ T
Max
9.0
5.0
5.0
4.0
15
50
—
—
—
—
—
—
—
A
A
≤ +85°C for industrial
≤ +125°C for extended
Units
Year
E/W
mA
mA
mA
ms
μ
pF
pF
V
V
V
V
A
In XT, HS and LP modes when
external clock is used to drive
OSC1
Program Flash Memory
Data Flash Memory
Temperature during programming:
-40°C ≤ T
Temperature during programming:
10°C ≤ T
V
V
voltage
Provided no other specifications
are violated
MIN
MAX
= Minimum operating voltage
= Maximum operating
A
A
≤ 40°C
≤ 85°C
Conditions
DS41350C-page 369
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