MC68HC908AZ32ACFU MOTOROLA [Motorola, Inc], MC68HC908AZ32ACFU Datasheet - Page 65

• Manufacturer Part Number: MC68HC908AZ32ACFU
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

4.4.1 FLASH Control Register
68HC908AZ32A — Rev 0.0
MOTOROLA
Address:
The FLASH Control Register (FLCR) controls FLASH program and
erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
Reset:
Read:
Write:
Freescale Semiconductor, Inc.
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
Setting this read/write bit configures the FLASH array for mass or
page erase operation.
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
set at the same time.
For More Information On This Product,
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
1 = Erase operation selected
0 = Erase operation unselected
$FF88
Bit 7
0
0
Figure 4-1. FLASH Control Register (FLCR)
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FLASH Memory
6
0
0
5
0
0
4
0
0
FLASH Control and Block Protect Registers
HVEN
3
0
MASS
2
0
Advance Information
ERASE
FLASH Memory
1
0
PGM
Bit 0
0
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