HYB18T512160A Infineon Technologies AG, HYB18T512160A Datasheet - Page 34

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HYB18T512160A

Manufacturer Part Number
HYB18T512160A
Description
512-Mbit Double-Data-Rate-Two SDRAM
Manufacturer
Infineon Technologies AG
Datasheet

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Quantity
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Manufacturer:
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Mode entry:
As long as the timing parameter
when ODT is turned on or off before entering these
power-down modes, synchronous timing parameters
Figure 15
Data Sheet
ODT turn-on, tANPD < 3 tCK :
ODT turn-on, tANPD >= 3 tCK :
ODT turn-off, tANPD >= 3 tCK :
ODT turn-off, tANPD <3 tCK :
CK, CK
CKE
ODT Mode entry Timing Diagram
ODT
ODT
ODT
ODT
T-
5
t
ANPD, min
T-
4
is satisfied
t
t
IS
IS
RTT
T-
3
RTT
tAOND
t
IS
34
tAOFD
tANPD (3 tCK)
can be applied. If
asynchronous timing parameters apply.
T-
2
tAONPDmax
512-Mbit Double-Data-Rate-Two SDRAM
HYB18T512[400/800/160]A[C/F]–[3.7/5]
tAOFPDmax
T-
1
t
ANPD, min
t
IS
RTT
T
0
RTT
is not satisfied,
ODT0
3
Functional Description
09112003-SDM9-IQ3P
T
1
Rev. 1.13, 2004-05
Synchronou
Asynchronou
Synchronou
Asynchronou
timings
timings
timings
timings
apply
apply
apply
apply
T
2

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