HYB18T512160A Infineon Technologies AG, HYB18T512160A Datasheet - Page 43

• Manufacturer Part Number: HYB18T512160A
• Description: 512-Mbit Double-Data-Rate-Two SDRAM
• Manufacturer: Infineon Technologies AG

Figure 29
Figure 30
Figure 31
Data Sheet
D Q S ,
D Q S
D Q S ,
D Q S
C K , C K
C K , C K
C M D
C M D
D Q
D Q
W R IT E A
P o s t C A S
P ost C A S
W R IT E A
Basic Write Timing
T0
Example Timing Diagram : Write Operation: RL = 5 (AL = 2, CL = 3), WL = 4, BL = 4
T0
Write Operation Example: RL = 3 (AL = 0, CL = 3), WL = 2, BL = 4
WL = RL-1 = 2
DQS,
DQS
T1
T1
N O P
N O P
WL = RL-1 = 4
DIN A0 DIN A1 DIN A2 DIN A3
T2
T2
N O P
N O P
<= tDQSS
t
DS
t
T3
WPRE
T3
N O P
N O P
Din
t
DQSH
DQS
DQS
T4
Din
DIN A0 DIN A1 DIN A2 DIN A3
T4
43
N O P
N O P
t
DQSL
<= tDQSS
C om pletion of
the B urst W rite
t
512-Mbit Double-Data-Rate-Two SDRAM
DH
HYB18T512[400/800/160]A[C/F]–[3.7/5]
Din
T5
T5
N O P
N O P
tW R
Din
t
T6
T6
WPST
N O P
N O P
C o m p le tio n o f
th e B u rs t W rite
tW R
T7
P recha rge
T7
N O P
Functional Description
09112003-SDM9-IQ3P
tR P
Rev. 1.13, 2004-05
P re c h a rg e
T9
B ank A
A ctiva te
T9
BW543
BW322